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| LH1262CAC/ CACTR/ CB Vishay Semiconductors Dual Photovoltaic MOSFET Driver Solid State Relay DIP 8 7 6 5 Features * * * * * * * High Open Circuit Voltage High Short Circuit Current Isolation Test Voltage 5300 VRMS Logic Compatible Input High Reliability Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179020 SMD 1 2 3 4 + Control 1 - Control 1 + Control 2 - Control 2 - Output 1 + Output 1 - Output 2 + Output 2 e3 Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * BSI/BABT Cert. No. 7980 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending * FIMKO Approval Pb Pb-free Description The LH1262CB/CAC Photovoltaic MOSFET Driver consists of two LEDs optically coupled to two photodiode arrays. The photodiode array provides a floating source with adequate voltage and current to drive high-power MOSFET transistors. Optical coupling provides a high I/ O Isolation voltage. In order to turn the MOSFET off, an external resistance (gate-tosource) is required for gate discharge. Applications High-side Driver Solid State Relays Floating Power Supply Power Control Data Acquisition ATE Isolated Switching See "Solid Statae Relays" (Application Note 56) Order Information Part LH1262CAC LH1262CACTR LH1262CB Remarks Tubes, SMD-8 Tape and Reel, SMD-8 Tubes, DIP-8 Document Number 83802 Rev. 1.3, 26-Oct-04 www.vishay.com 1 LH1262CAC/ CACTR/ CB Vishay Semiconductors Absolute Maximum Ratings, Tamb = 25 C Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Ratings for extended periods of time can adversely affect reliability. SSR Parameter LED input ratings continuous forward current LED input ratings reverse voltage Photodiode array reverse voltage Ambient operating temperature range Storage temperature range Pin soldering time Input/output isolation voltage t = 7.0 s max. t = 60 s min. IR 10 A IR 2.0 A Test condition Symbol IF VR VR Tamb Tstg TS VISO Value 50 5.0 100 - 40 to + 100 - 40 to + 150 270 5300 Unit mA V V C C C VRMS Electrical Characteristics, Tamb = 25 C Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Parameter LED forward voltage Detector forward voltage Detector reverse voltage Open circuit voltage (pins 5, 6 or 7, 8) Test condition IF = 10 mA IF = 10 A IR = 2.0 A IF = 5.0 mA IF = 10 mA IF = 20 mA Short circuit current (pins 5, 6 or 7, 8) IF= 5.0 mA IF = 10 mA IF = 20 mA Turn-on time Turn-off time 1) Symbol VF VF(PDA) VR(PDA) VOC VOC VOC ISC ISC ISC ton toff Min 1.15 Typ. 1.26 14 200 Max 1.45 Unit V V V 10 12 13.1 13.3 15 V V V 1.0 2.6 2.44 5.24 10.8 35 90 6.5 14 A A A s s IF = 20 mA1) IF = 20 mA1) f = 1.0 kHz, pulse width = 100 s, load (RL) = 1.0 M, 15 pF; measured at 90 % rated voltage (ton), 10 % rated voltage (toff). Actuation speed depends upon the external ton and toff circuitry and the capacitance of the MOSFET. Functional Description Figure 1 outlines the IV characteristics of the illuminated photodiode array (PDA). For operation at voltages below VOC, the PDA acts as a nearly constant current source. The actual region of operation depends upon the load. The amount of current applied to the LED (pins 1 and 2 or 3 and 4) determines the amount of light produced for the PDA. For high temperature operation, more LED current may be required. www.vishay.com 2 Document Number 83802 Rev. 1.3, 26-Oct-04 LH1262CAC/ CACTR/ CB Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 17 17 A IF=20 mA Open-circuit Voltage (V) 16 15 14 13 12 11 10 Short Circuit Current (Isc) IF =20 mA IF =10 mA IF =5.0 mA 8 A 4 A IF=10 mA IF=5.0 mA Open Circuit Voltage (VOC) ilh1262cb_01 10 13.5 14 14.5 +V ilh1262cb_04 0 -40 -20 0 20 40 60 Ambient Temperature (C) 80 100 Figure 1. Typical PDA ON Characteristics Figure 4. Typical PDA ON Characteristics 16 14 Short-cirucuit Current (A) Output Voltage (V) 25 20 15 10 5 0 -40 16 20 ilh1262cb_05 12 10 8 6 4 2 0 0 4 R L= R L=10 M R L=5.1 M R L=2.2 M R L=1.0 M 8 12 LED Forward Current (mA) IF =20 mA IF =10 mA IF =5.0 mA -20 0 20 40 60 80 100 Ambient Temperature (C) ilh1262cb_02 Figure 2. Typical PDA ON Characteristics Figure 5. Typical PDA ON Characteristics 20 Short Circuit Current (A) 1.6 1.5 LED Forward Voltage (V) 16 12 8 4 0 IF =50 mA 1.4 1.3 1.2 IF =2.0 mA 1.1 IF =5.0 mA 1.0 -40 IF =10 mA IF =20 mA 0 4 8 12 LED Forward Current (mA) 16 20 -20 ilh1262cb_03 ilh1262cb_06 60 0 20 40 Ambient Temperature (C) 80 Figure 3. Typical PDA ON Characteristics Figure 6. Typical PDA ON Characteristics Document Number 83802 Rev. 1.3, 26-Oct-04 www.vishay.com 3 LH1262CAC/ CACTR/ CB Vishay Semiconductors Figure 7. Typical PDA ON Characteristics 104 IF=20 mA Response Time (s) 103 ton ton toff 102 toff RL=2.2 M RL=1.0 M 101 10 ilh1262cb_07 100 Load Capacitance (pF) 1000 1 - Channel 1 Control 2 + 8 P-Channel JFET 7 2.0 M Switch1 N-Channel MOSFETs 3 Channel 2 Control 4 - + 6 P-Channel JFET 5 Switch2 N-Channel MOSFETs 2.0 M ilh1262cb_08 Figure 8. Typical Dual Form A Solid State Relay Application www.vishay.com 4 Document Number 83802 Rev. 1.3, 26-Oct-04 LH1262CAC/ CACTR/ CB Vishay Semiconductors Package Dimensions in Inches (mm) DIP pin one ID 4 .268 (6.81) .255 (6.48) 5 6 7 8 ISO Method A 3 2 1 .390 (9.91) .379 (9.63) .045 (1.14) .030 (0.76) 4 typ. .031 (0.79) .150 (3.81) .130 (3.30) .050 (1.27) .022 (.56) .018 (.46) i178008 .300 (7.62) typ. 10 .035 (.89) .020 (.51) .100 (2.54) typ. 3-9 .012 (.30) .008 (.20) .250 (6.35) .230 (5.84) .130 (3.30) .110 (2.79) Package Dimensions in Inches (mm) SMD Pin one I.D . .268 (6.81) .255 (6.48) .100 (2.54) .030 (.76) R .010 (.25) .070 (1.78) .390 (9.91) .379 (9.63) .031 (.79) typ. .150 (3.81) .130 (3.30) .315 (8.00) min .435 (11.05) .060 (1.52) ISO Method A .045 (1.14) .030 (0.78) Radius .395 (10.03) .375 (9.52) .312 (7.80) .298 (7.52) 3 to 7 10 .315 (8.00) typ. .010 (2.54) typ. 4 typ. .050 (1.27) typ. .008 (.25) .004 (.10) .100 (2.54) typ. .040 (1.02) .020 (.51) i178009 Document Number 83802 Rev. 1.3, 26-Oct-04 www.vishay.com 5 LH1262CAC/ CACTR/ CB Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83802 Rev. 1.3, 26-Oct-04 |
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